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LIS3L02AQ
November 2004
1
FEATURES
2.4V TO 3.6V SINGLE SUPPLY OPERATION
0.5mg RESOLUTION OVER 100Hz BW
2g/6g USER SELECTABLE FULL-SCALE
OUTPUT VOLTAGE, OFFSET AND
SENSITIVITY RATIOMETRIC TO THE
SUPPLY VOLTAGE
FACTORY TRIMMED DEVICE SENSITIVITY
AND OFFSET
EMBEDDED SELF TEST
HIGH SHOCK SURVIVABILITY
2
DESCRIPTION
The LIS3L02AQ is a low-power three-axis linear ac-
celerometer that includes a sensing element and an
IC interface able to take the information from the
sensing element and to provide an analog signal to
the external world.
The sensing element, capable to detect the acceler-
ation, is manufactured using a dedicated process
called THELMA (Thick Epi-Poly Layer for Microactu-
ators and Accelerometers) developed by ST to pro-
duce inertial sensors and actuators in silicon.
The IC interface instead is manufactured using a
CMOS process that allows high level of integration to
design a dedicated circuit which is trimmed to better
match the sensing element characteristics.
The LIS3L02AQ has a user selectable full scale of
2g, 6g and it is capable of measuring accelerations
over a maximum bandwidth of 4.0 KHz for the X and
Y axis and 2.5KHz for the Z axis. The device band-
width may be reduced by using external capacitanc-
es. A self-test capability allows the user to check the
functioning of the system.
The LIS3L02AQ is available in plastic SMD package
and it is specified over a temperature range extend-
ing from -40C to +85C.
The LIS3L02AQ belongs to a family of products suit-
able for a variety of applications:
Motion activated functions in mobile terminals
Gaming and Virtual Reality input devices
Free-fall detection and Data protection
Antitheft systems and Inertial Navigation
Appliance Control and Robotics
INERTIAL SENSOR:
3Axis - 2g/6g LINEAR ACCELEROMETER
Figure 2. Block Diagram
DEMUX
S/H
CHARGE
AMPLIFIER
S/H
MUX
S1Y
S1Z
S2Y
S2Z
Voutx
Voutz
Routx
Routz
VOLTAGE & CURRENT
REFERENCE
TRIMMING CIRCUIT
&
CLOCK
&
PHASE GENERATOR
TEST INTERFACE
S/H
Vouty
Routy
rot
S1X
S2X
Figure 1. Package
Table 1. Order Codes
Part Number
Package
LIS3L02AQ
QFN-44
QFN-44
Rev. 4
LIS3L02AQ
2/9
Table 2. Pin Description
Figure 3. Pin Connection (Top view)
N
Pin
Function
1 to 3
NC
Internally not connected
4
GND
0V supply
5
Vdd
Power supply
6
Vouty
Output Voltage
7
ST
Self Test (Logic 0: normal mode; Logic 1: Self-test)
8
Voutx
Output Voltage
9-13
NC
Internally not connected
14
PD
Power Down (Logic 0: normal mode; Logic 1: Power-Down mode)
15
Voutz
Output Voltage
16
FS
Full Scale selection (Logic 0: 2g Full-scale; Logic 1: 6g Full-scale)
17-18
Reserved
Leave unconnected
19
NC
Internally not connected
20
Reserved
Leave unconnected
21
NC
Internally not connected
22-23
Reserved
Leave unconnected
24-25
NC
Internally not connected
26
Reserved
Connect to Vdd or GND
27
Reserved
Leave unconnected or connect to Vdd
28
Reserved
Leave unconnected or connect to GND
29-44
NC
Internally not connected
DIRECTION OF THE
DETECTABLE
ACCELERATIONS
Y
1
X
NC
NC
NC
GND
Vdd
Vouty
ST
Voutx
NC
NC
NC
NC
NC
NC
NC
NC
Reserved
Reserved
Reserved
NC
NC
Reserved
NC
NC
PD
Vo
u
t
z
FS
Re
s
e
rv
e
d
Re
s
e
rv
e
d
Re
s
e
rv
e
d
Re
s
e
rv
e
d
NC
Re
s
e
rv
e
d
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
LIS3L02AQ
Z
3/9
LIS3L02AQ
Table 3. Electrical Characteristics
(Temperature range -40C to +85C) All the parameters are specified @ Vdd =3.3V, T=25C unless
otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
1
Max.
Unit
Vdd
Supply voltage
2.4
3.3
3.6
V
Idd
Supply current
mean value
PD pin connected
to GND
0.85
1.5
mA
IddPdn
Supply current in Power Down
Mode
rms value
PD pin connected
to Vdd
2
5
A
Voff
Zero-g level
2
T = 25C
Vdd/2-10%
Vdd/2
Vdd/2+10%
V
OffDr
Zero-g level Vs temperature
Delta from +25C
1.5
mg/C
Ar
Acceleration range
3
FS pin connected
to GND
1.8
2.0
g
FS pin connected
to Vdd
5.4
6.0
g
So
Sensitivity
2
Full-scale = 2g
Vdd/510%
Vdd/5
Vdd/5+10%
V/g
Full-scale = 6g
Vdd/1510%
Vdd/15
Vdd/15+10%
V/g
SoDr
Sensitivity drift Vs
temperature
Delta from +25C
0.01
%/C
NL
Non Linearity
4
Best fit straight line
Full-scale = 2g
X, Y axis
0.3
1.5
% FS
Best fit straight
line;
Full-scale = 2g
Z axis
0.6
2
% FS
CrossAx
Cross-Axis
5
2
4
%
fuc
Sensing Element Resonant
Frequency
6
X, Y axis
3.2
4.0
4.8
KHz
Z axis
1.8
2.5
3.2
KHz
an
Acceleration noise density
Vdd=3.3V;
Full-scale = 2g
50
g/
Vt
Self test output voltage delta
change
7,8,9
T = 25C
Vdd=3.3V
Full-scale = 2g
X axis
-20
-40
mV
T = 25C
Vdd=3.3V
Full-scale = 2g
Y axis
20
40
mV
T = 25C
Vdd=3.3V
Full-scale = 2g
Z axis
20
50
mV
Hz
LIS3L02AQ
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Notes: 1. Typical specifications are not guaranteed
2. Offset and sensitivity are essentially ratiometric to supply voltage
3. Guaranteed by wafer level test and measurement of initial offset and sensitivity
4. Guaranteed by design through measurements done up to 1g
5. Contribution to the measuring output of the inclination/acceleration along the perpendicular axis
6. Guaranteed by design
7. Self test "output voltage delta change" is defined as Vout
(Vst=Logic1)
-Vout
(Vst=Logic0)
8. Self test "output voltage delta change" varies cubically with supply voltage
9. When full-scale is set to 6g, self-test "output delta change" is one third of the specified value
10.Bandwidth=1/(2*
*110K*Cload)
ABSOLUTE MAXIMUM RATING
Stresses above those listed as "absolute maximum ratings" may cause permanent damage to the device. This
is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to
maximum rating conditions for extended periods may affect device reliability.
Table 4. Absolute Maximum Rating
Vst
Self test input
Logic 0 level
0
0.8
V
Logic 1 level
2.2
Vdd
V
Rout
Output impedance
80
110
140
k
Cload
Capacitive load drive
10
320
pF
Ton
Turn-On Time at exit from
Power Down mode
Cload in
F
550*Cload
+0.3
ms
Symbol
Ratings
Maximum Value
Unit
Vdd
Supply voltage
-0.3 to 7
V
Vin
Input voltage on any control pin (FS, PD, ST)
-0.3 to Vdd +0.3
V
A
POW
Acceleration (Any axis, Powered, Vdd=3.3V)
3000g for 0.5 ms
10000g for 0.1 ms
A
UNP
Acceleration (Any axis, Unpowered)
3000g for 0.5 ms
10000g for 0.1 ms
T
OP
Operating Temperature Range
-40 to +85
C
T
STG
Storage Temperature Range
-40 to +105
C
ESD
Electrostatic discharge protection
2KV HBM
Table 3. Electrical Characteristics (continued)
(Temperature range -40C to +85C) All the parameters are specified @ Vdd =3.3V, T=25C unless
otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
1
Max.
Unit
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LIS3L02AQ
3
FUNCTIONALITY
The LIS3L02AQ is a low-cost, low-power, analog output three-axis linear accelerometer packaged in QFN pack-
age. The complete device includes a sensing element and an IC interface able to take the information from the
sensing element and to provide an analog signal to the external world.
3.1 Sensing element
The THELMA process is utilized to create a surface micro-machined accelerometer. The technology allows to
carry out suspended silicon structures which are attached to the substrate in a few points called anchors and
free to move on a plane parallel to the substrate itself. To be compatible with the traditional packaging tech-
niques a cap is placed on top of the sensing element to avoid blocking the moving parts during the molding
phase.
The equivalent circuit for the sensing element is shown in the figure below; when a linear acceleration is applied,
the proof mass displaces from its nominal position, causing an imbalance in the capacitive half-bridge. This im-
balance is measured using charge integration in response to a voltage pulse applied to the sense capacitor.
Figure 4. Equivalent electrical circuit
C
s1x
C
s2x
C
ps1
C
ps2
C
pr
R
s2
R
s1
R
r
S1x
rot
S2x
C
s1y
C
s2y
C
ps1
C
ps2
C
pr
R
s2
R
s1
R
r
S1y
S2y
C
s1z
C
s2z
C
ps1
C
ps2
C
pr
R
s2
R
s1
R
r
S1z
S2z
LIS3L02AQ
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The nominal value of the capacitors, at steady state, is few pF and when an acceleration is applied the maximum
variation of the capacitive load is few hundredths of pF.
3.2 IC Interface
The complete signal processing uses a fully differential structure, while the final stage converts the differential
signal into a single-ended one to be compatible with the external world.
The first stage is a low-noise capacitive amplifier that implements a Correlated Double Sampling (CDS) at its
output to cancel the offset and the 1/f noise. The produced signal is then sent to three different S&Hs, one for
each channel, and made available to the outside.
The low noise input amplifier operates at 200 kHz while the three S&Hs operate at a sampling frequency of 66
kHz. This allows a large oversampling ratio, which leads to in-band noise reduction and to an accurate output
waveform.
All the analog parameters (output offset voltage and sensitivity) are ratiometric to the voltage supply. Increasing
or decreasing the voltage supply, the sensitivity and the offset will increase or decrease linearly. The feature
provides the cancellation of the error related to the voltage supply along an analog to digital conversion chain.
3.3 Factory calibration
The IC interface is factory calibrated to provide to the final user a device ready to operate.
The trimming values are stored inside the device by a non volatile structure. Any time the device is turned on,
the trimming parameters are downloaded into the registers to be employed during the normal operation thus
allowing the final user to employ the device without any need for further calibration.
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LIS3L02AQ
4
PACKAGE INFORMATION
Figure 5. QFN-44 Mechanical Data & Package Dimensions
OUTLINE AND
MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
1.70
1.80
1.90
0.067
0.071
0.075
A1
0.19
0.21
0.007
0.008
b
0.20
0.25
0.30
0.008
0.01
0.012
D
7.0
0.276
E
7.0
0.276
e
0.50
0.020
J
5.04
5.24
0.198
0.206
K
5.04
5.24
0.198
0.206
L
0.38
0.48
0.58
0.015
0.019
0.023
P
45 REF
45 REF
QFN-44 (7x7x1.8mm)
Quad Flat Package No lead
G
M
M
DETAIL "N"
34
44
11
1
N
22
12
23
33
44
1
DETAIL G
SEATING PLANE
LIS3L02AQ
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Table 5. Revision History
Date
Revision
Description of Changes
January 2004
1
First Issue
February 2004
2
Values of some parameters has been changed in Electrical
characteristics table.
November 2004
3
Modified/added some values in the table 2 Electrical characteristics.
November 2004
4
Corrected few typo errors.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
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LIS3L02AQ
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